Infineon IPP114N12N3G: High-Performance OptiMOS 5 Power MOSFET for Efficient Power Conversion
The relentless pursuit of higher efficiency and power density in modern electronic systems places immense demands on power switching components. Addressing this challenge head-on, the Infineon IPP114N12N3G stands as a premier example of advanced power semiconductor technology. As part of the renowned OptiMOS 5 family, this N-channel power MOSFET is engineered to set new benchmarks in performance for a wide range of power conversion applications.
At its core, the IPP114N12N3G is designed to minimize energy loss. Built with Infineon’s state-of-the-art superjunction technology, it offers an exceptionally low typical on-state resistance (R DS(on)) of just 1.8 mΩ at 10 V. This crucial characteristic directly translates to reduced conduction losses, allowing more power to be delivered to the load with less energy wasted as heat. Whether in a hard-switching or soft-switching topology, this low R DS(on) is pivotal for achieving peak efficiency.
Beyond static losses, switching performance is paramount. The OptiMOS 5 technology ensures superior switching behavior, characterized by low gate charge (Q G) and low figures of merit (FOM). This results in significantly reduced switching losses, which is especially critical in high-frequency applications such as switch-mode power supplies (SMPS), solar inverters, and motor drives. By operating efficiently at higher frequencies, designers can leverage smaller passive components like inductors and capacitors, thereby increasing overall system power density and reducing solution size and cost.
The device is rated for 114 A continuous current and 120 V drain-source voltage, making it exceptionally versatile. Its robustness is further enhanced by its avalanche ruggedness and a body diode with excellent reverse recovery characteristics, ensuring reliable operation under demanding conditions. The package itself, the D 2PAK-7 (TO-263-7), offers a superior footprint with an additional source sense pin. This allows for a more accurate measurement of current and a more stable switching loop, which is essential for minimizing parasitic inductance and optimizing performance in high-current scenarios.
A primary application target is server and telecom power supplies, where efficiency standards like 80 PLUS Titanium are mandatory. Furthermore, it is an ideal candidate for industrial motor control and renewable energy systems, where reliability and efficiency over a wide temperature range are non-negotiable.
ICGOOODFIND: The Infineon IPP114N12N3G is a top-tier power MOSFET that delivers an outstanding blend of ultra-low R DS(on), fast switching speed, and high ruggedness. It empowers engineers to design next-generation power systems that are not only more efficient but also more compact and reliable, pushing the boundaries of what is possible in power conversion.
Keywords: Power Efficiency, Low RDS(on), OptiMOS 5, High-Frequency Switching, Power Density.
