Infineon BSC050N04LS 40V OptiMOS Power MOSFET: Performance and Applications

The Infineon BSC050N04LS is a 40V N-channel power MOSFET from Infineon’s OptiMOS™ family, engineered to deliver superior efficiency and reliability in a wide range of power management applications. With its advanced trench technology and optimized packaging, this MOSFET sets a high standard for performance in compact and energy-sensitive designs.

A key highlight of the BSC050N04LS is its extremely low on-state resistance (RDS(on)) of just 5.0 mΩ (max). This low resistance minimizes conduction losses, leading to higher efficiency and reduced heat generation. Combined with a continuous drain current (ID) rating of 50 A, the device is capable of handling significant power levels while maintaining thermal stability. The low gate charge (QG) and fast switching characteristics further enhance performance in high-frequency applications, making it ideal for use in switch-mode power supplies (SMPS), motor control systems, and synchronous rectification circuits.

The MOSFET is housed in a compact and robust SuperSO8 package, which offers excellent thermal and electrical properties. This package not only saves valuable PCB space but also improves power density, making the component suitable for modern, space-constrained applications such as server power supplies, telecom infrastructure, and automotive systems.

In addition to its technical strengths, the BSC050N04LS is designed with reliability in mind. Its high avalanche ruggedness and improved body diode ensure robust operation under stressful conditions, including inductive load switching and overvoltage scenarios.

Typical applications include DC-DC converters, battery management systems, and load switching, where high efficiency and thermal performance are critical. Its ability to operate at high frequencies with minimal losses also makes it a preferred choice for advanced power conversion tasks.

ICGOOODFIND:

The Infineon BSC050N04LS 40V OptiMOS MOSFET stands out for its low RDS(on), high current capability, and excellent switching performance, making it a versatile solution for high-efficiency power applications.

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Keywords:

Power MOSFET, Low RDS(on), High Efficiency, Fast Switching, SuperSO8 Package