Infineon BAT62-03W Silicon Schottky Barrier Diode: Characteristics and Applications

The Infineon BAT62-03W is a high-performance silicon Schottky barrier diode designed for high-frequency and low-power applications. As a surface-mount device (SMD) in the SOD-323 package, it offers excellent electrical characteristics, making it a popular choice in modern electronic circuits where efficiency, speed, and compactness are critical.

Key Characteristics

One of the most notable features of the BAT62-03W is its low forward voltage drop, typically around 0.35 V at 0.1 mA. This low threshold minimizes power loss and improves efficiency in low-voltage circuits. Additionally, the diode exhibits extremely fast switching speeds due to the Schottky barrier principle, which relies on majority carrier conduction, eliminating the reverse recovery charge typical of PN-junction diodes. This makes it ideal for high-frequency applications such as RF detectors and mixers.

The device has a low reverse leakage current and a maximum reverse voltage of 30 V, balancing performance with reliability. Its SMD packaging ensures compactness and mechanical stability, suitable for automated PCB assembly.

Primary Applications

Thanks to its unique properties, the BAT62-03W is widely used in:

- Signal demodulation and RF detection in communication systems

- Sample-and-hold circuits and precision analog systems

- Voltage clamping and protection circuits

- High-frequency rectification in switching power supplies

- Mixer and multiplier circuits in wireless devices

ICGOODFIND Summary:

The Infineon BAT62-03W Schottky diode stands out for its low forward voltage, fast switching, and compact SMD design, making it indispensable in high-frequency, low-power applications across telecommunications, computing, and consumer electronics.

Keywords:

Schottky Barrier Diode, Low Forward Voltage, Fast Switching, RF Detection, Surface-Mount Device