Infineon BSC030N04NS 30V N-Channel MOSFET Datasheet and Application Review
The Infineon BSC030N04NS is a 30V N-Channel MOSFET based on Infineon’s advanced OptiMOS™ technology. Designed for high-efficiency and high-power-density applications, this MOSFET offers an excellent combination of low on-state resistance, high switching performance, and robust reliability. It is particularly suitable for use in synchronous rectification, DC-DC conversion, motor control, and power management in computing, telecom, and industrial systems.
A key highlight of the BSC030N04NS is its extremely low typical RDS(on) of just 1.7 mΩ at 10 V gate drive. This low resistance significantly reduces conduction losses, making the device ideal for high-current applications. The MOSFET also features a compact and thermally efficient PG-TDSON-8 package, which supports improved power dissipation and easier PCB layout design in space-constrained environments.
The switching characteristics of the BSC030N04NS are optimized for high-frequency operation. With low gate charge (Qg) and output capacitance (Coss), it enables faster turn-on and turn-off transitions, contributing to reduced switching losses and higher overall system efficiency. Furthermore, the device offers enhanced avalanche ruggedness and a body diode with good reverse recovery behavior, increasing its durability in demanding operating conditions.
In practical applications, such as synchronous buck converters, this MOSFET can be used as both the high-side and low-side switch. Its performance attributes help achieve higher efficiency across a wide load range. Designers should pay attention to proper gate driving, layout parasitics, and thermal management to maximize performance.
ICGOOODFIND: The Infineon BSC030N04NS stands out as a high-performance power MOSFET, offering an outstanding balance of low RDS(on), high switching speed, and superior thermal properties. It is an excellent choice for modern power electronics where efficiency, power density, and reliability are critical.
---
Keywords:
Low RDS(on), Synchronous Rectification, OptiMOS™, High Switching Performance, Power Density
