Infineon IPA60R199CP: 600V CoolMOS™ Power Transistor for High-Efficiency Applications

The continuous demand for higher efficiency and power density in modern electronic systems has driven the development of advanced power semiconductor technologies. At the forefront of this innovation is Infineon Technologies with its CoolMOS™ family. The IPA60R199CP, a 600V superjunction MOSFET, stands out as a premier solution engineered for high-performance, high-efficiency applications.

This Power Transistor is built upon Infineon’s proprietary CoolMOS™ C7 superjunction (SJ) technology. This technology represents a significant leap from standard MOSFETs, offering a drastically improved figure-of-merit by minimizing both on-state resistance (RDS(on)) and gate charge (Qg). The key result is exceptionally low switching and conduction losses, which are the primary sources of energy waste in power conversion systems. For the designer, this translates into cooler running systems, reduced heat sinking requirements, and the ability to achieve higher switching frequencies, which in turn allows for the use of smaller passive components like inductors and capacitors.

The IPA60R199CP boasts a robust 600V drain-source voltage rating, making it an ideal candidate for a wide array of off-line power supplies. It is particularly well-suited for:

Switched-Mode Power Supplies (SMPS) such as server, telecom, and industrial power units.

Power Factor Correction (PFC) stages, which are critical for meeting modern energy efficiency regulations.

High-frequency inverters and lighting control applications.

Solar inverters and other renewable energy systems.

A critical specification that highlights its efficiency is its ultra-low on-resistance of just 199mΩ at maximum gate voltage. This low RDS(on) ensures minimal voltage drop and power loss when the device is fully switched on, directly contributing to higher overall system efficiency. Furthermore, its low gate charge enables very fast switching speeds, reducing the time spent in the lossy transition region between on and off states.

The device is offered in the industry-standard TO-220 full-pack (FP) package. This package is not only mechanically robust and widely used but also designed for effective thermal management, allowing generated heat to be efficiently transferred to a heatsink.

ICGOOODFIND: The Infineon IPA60R199CP is a benchmark 600V superjunction MOSFET that sets a high standard for efficiency and performance. By leveraging advanced CoolMOS™ C7 technology, it delivers a superior blend of low conduction loss and fast switching capability, making it an excellent choice for designers aiming to maximize power density and efficiency in their next-generation applications.

Keywords: CoolMOS™, High-Efficiency, Superjunction MOSFET, Low RDS(on), Power Factor Correction (PFC).