Infineon BSC014N04LSTATMA1: Redefining Power Density with 40V OptiMOS™ Technology
The relentless pursuit of higher efficiency and power density in modern electronics drives innovation in semiconductor components. At the forefront of this movement is the Infineon BSC014N04LSTATMA1, a 40V, single N-channel power MOSFET that sets a new benchmark for performance in a compact SuperSO8 package. This device is engineered to deliver exceptional power handling and thermal management in a minimal footprint, making it an ideal solution for a wide array of demanding applications.
A defining characteristic of this MOSFET is its extremely low typical on-state resistance (RDS(on)) of just 1.4 mΩ. This ultra-low resistance is the key to minimizing conduction losses, which directly translates into higher system efficiency, reduced heat generation, and the potential for cooler operation. By dissipating less power as waste heat, designers can either simplify thermal management solutions or push the performance envelope further within the same design constraints.
The component is housed in the SuperSO8 (SSO-8) package, which is renowned for its superior thermal and electrical characteristics compared to standard SO-8 packages. Despite its small size, the package features an exposed thermal pad that provides an exceptionally low thermal resistance path to the PCB. This allows for highly efficient heat dissipation, enabling the device to handle high continuous and pulsed drain currents (Id: 270A @ 25°C) reliably. This robust performance is critical for applications subjected to high transient loads.
Optimized for switching performance, the BSC014N04LSTATMA1 features low gate charge (Qg) and output capacitance (Coss). These parameters ensure fast switching speeds, which are essential for high-frequency operation in switch-mode power supplies. Faster switching reduces switching losses, another significant contributor to energy loss in power conversion stages. This makes the MOSFET perfectly suited for high-frequency DC-DC converters in server, telecom, and computing infrastructure, where efficiency targets are stringent.
Furthermore, its 40V drain-source voltage rating makes it a robust choice for secondary side synchronous rectification in switched-mode power supplies (SMPS) and for motor drive and control circuits in industrial automation, robotics, and battery management systems (BMS) for power tools and e-mobility solutions.
ICGOODFIND: The Infineon BSC014N04LSTATMA1 exemplifies the pinnacle of power MOSFET design, combining an ultra-low 1.4 mΩ RDS(on) with the superior thermal performance of the SuperSO8 package. It is a critical enabler for designers aiming to achieve unprecedented levels of efficiency and power density in space-constrained, high-performance applications.
Keywords: OptiMOS™, Low RDS(on), SuperSO8 Package, High Power Density, Synchronous Rectification.
