Infineon IPD60R280P7: A High-Performance 600V CoolMOS™ P7 Power Transistor

In the realm of power electronics, efficiency, reliability, and thermal performance are paramount. The Infineon IPD60R280P7 stands out as a premier solution, embodying the advanced CoolMOS™ P7 technology to meet the rigorous demands of modern switch-mode power supplies (SMPS), industrial drives, and other high-efficiency applications.

This 600V power MOSFET is engineered to deliver exceptional efficiency through a significant reduction in switching and conduction losses. A key feature is its ultra-low on-state resistance (RDS(on)) of just 280 mΩ maximum at room temperature. This low resistance minimizes power loss during conduction, directly enhancing overall system efficiency and reducing the need for complex cooling mechanisms. Furthermore, the P7 series is renowned for its superior switching performance, which allows for higher switching frequencies. This capability enables designers to use smaller passive components like inductors and capacitors, leading to more compact and cost-effective power supply designs.

The robustness of the IPD60R280P7 is another critical advantage. It is designed with a strong focus on avalanche ruggedness and intrinsic body diode durability, ensuring high reliability even under harsh operating conditions, such as during overvoltage events or in hard-switching topologies like power factor correction (PFC) circuits. Its low gate charge (Qg) also simplifies drive requirements, making it easier to control and integrate into existing designs.

Thermal management is a cornerstone of the CoolMOS™ P7 technology. The transistor exhibits excellent thermal characteristics, thanks to its optimized package and silicon technology. This allows for higher power density and more reliable operation at elevated temperatures, a crucial factor for applications where space is limited and heat dissipation is a challenge.

ICGOO FIND: The Infineon IPD60R280P7 is a top-tier 600V MOSFET that sets a high standard for performance. Its blend of ultra-low RDS(on), fast switching speed, and proven robustness makes it an ideal cornerstone for engineers striving to create the next generation of efficient, compact, and reliable power conversion systems.

Keywords: CoolMOS™ P7, High Efficiency, Low RDS(on), Fast Switching, Avalanche Ruggedness.